Surface photovoltage in undoped n-type GaN

Transient surface photovoltage in n- and p-GaN as probed by x-ray photoelectron spectroscopy

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Local conductivity and surface photovoltage variations due to magnesium segregation in p-type GaN

Conductive atomic force microscopy ~C-AFM! and surface photovoltage ~SPV! microscopy were used to investigate local electronic structure in p-type GaN. C-AFM imaging revealed locally reduced forwardand reverse-bias conductivity near threading dislocations. In addition, regions near threading dislocations demonstrated significantly enhanced surface photovoltage response when compared to regions ...

Temperature dependence of the band gap shrinkage due to electron-phonon interaction in undoped n-type GaN

The photoluminescence spectra of band-edge transitions in GaN is studied as a function of temperature. The parameters that describe the temperature dependence red-shift of the band-edge transition energy and the broadening of emission line are evaluated using different models. We find that the semi-empirical relation based on phonon-dispersion related spectral function leads to excellent fit to...

High Mobility in N-Type GaN Substrates

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the buil...